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Cracks are observed in many environments, including walls, dried wood and even the Earth’s crust, and are often thought of as an unavoidable, unwanted phenomenon. Recent research advances have demonstrated the the ability to use cracks to produce various micro and nanoscale patterns. However, patterns are usually limited by the chosen substrate material and the applied tensile stresses. Here we describe an innovative cracking-assisted nanofabrication technique that relies only on a standard photolithography process.

This novel technique produces well-controlled nanopatterns in any desired shape and in a variety of geometric dimensions, over large areas and with a high throughput. In addition, we show that mixed-scale patterns fabricated using the ‘crack-photolithography’ technique can be used as master moulds for replicating numerous nanofluidic devices via soft lithography, which to the best of our knowledge is a technique that has not been reported in previous studies on materials’ mechanical failure, including cracking. Standard photolithography techniques produce various micropatterns but are limited to a feature size of approximately a micron. To overcome this limitation, conventional nanolithography techniques such as electron-beam lithography and focused ion-beam are commonly employed.

Often, the standard photolithography and nanolithography techniques are used together to create mixed-scale patterns. However, the nanolithography and/or the combination of the two multi-scale lithography techniques show weaknesses in throughput and cost caused by the direct-writing-based nanofabrication processes and scale-up or scale-down lithography processes in series. Cracks are considered material failures and have never been welcome in micro/nanofabrication processes, but active manipulation of cracking phenomena made it possible to produce various micro and nanoscale patterns, showing remarkable potential for a novel unconventional patterning technique,,,,,,,. Mechanism for creating cracking-assisted nanopatterns shows a schematic diagram of the proposed nanofabrication process. Micropatterns with feature sizes of about 5 μm are typically fabricated by using standard photolithography, and using specific stress-concentrating and/or stress-releasing structures in conjunction one can control the initiation, propagation and termination of cracking to create the desired nanopatterns ().

For example, a sharp notch tends to concentrate stresses more effectively than a blunt one, and causes formation of cracks. In general, cracks are initiated when a stiff and thin elastic layer placed on a viscoelastic underlying layer is subjected to tensile stresses higher than its fracture strength. In the present work, the elastic and viscoelastic layers were formed by exposing the same spin-coated photoresist (10-μm thick) to ultraviolet light without using the i-line filters recommended by the manufacturer to enable uniform cross-linking throughout the thickness. This delicate process produced a relatively stiff and elastic layer onto a viscoelastic layer with a cross-linking gradient along the direction normal to the substrate, namely a silicon wafer (). Tensile stresses occur naturally in the elastic layer during the development process, causing the viscoelastic layer to swell (). When the coarsely cross-linked viscoelastic layer absorbs the solvent molecules, it swells isotropically, and consequently, the thin elastic layer above is subjected to an isotropic tensile stress. Once cracking is initiated, it keeps propagating until it reaches a termination structure, whereupon the concentrated stresses are finally released.

Thus, a nanoscale crack is successfully created between the initiating notch and the termination structure, as planned during the design stage. Additional details are provided in. ( a) Schematic diagram describing the process, from designing a photomask to fabricating nanopatterns on the surface of micropatterned photoresist. Cracking is initiated and terminated at the previously designed micro-notch structures. The inset is an atomic force microscopy (AFM) image showing a propagating crack tip.

( b) The ultraviolet-exposed photoresist consists of an elastic thin layer on a viscoelastic layer on a silicon substrate and exhibits a gradient in cross-linking density along the direction normal to the substrate. ( c) The viscoelastic layer swells during the development process, causing the occurrence of tensile stresses in the elastic layer. This two-layered thin film in the presence of tensile stresses generates cracking at the notch, where stresses are more concentrated.

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